Memory controller self-calibration for removing systemic influence

ABSTRACT

Self-calibration for a memory controller is performed by writing a voltage to a selected cell. Adjacent cells around the selected cell are programmed. After each of the adjacent programming operations, the voltage on the selected cell is read to determine any change in voltage caused by systemic offsets such as, for example, floating gate-to-floating gate coupling. These changes are averaged and stored in a table as an offset for use in adjusting a programming voltage or a read voltage in a particular area of memory represented by the offset. Self calibration method for temperature is determined by writing cells at different temperatures and reading at different temperatures to generate temperature offset tables for the write path and read path. These offset tables are used to adjust for systematic temperature related offsets during programming and during read.

RELATED APPLICATION

This Application is a continuation of U.S. application Ser. No.13/217,492, titled “MEMORY CONTROLLER SELF-CALIBRATION FOR REMOVINGSYSTEMIC INFLUENCE,” filed Aug. 25, 2011 (allowed), which is acontinuation of U.S. application Ser. No. 12/889,461, filed Sep. 24,2010, now U.S. Pat. No. 8,023,324, which is a continuation of U.S.application Ser. No. 11/851,439, filed Sep. 7, 2007, now U.S. Pat. No.7,817,467, all of which applications are commonly assigned andincorporated in their entirety herein by reference.

TECHNICAL FIELD

The present disclosure relates generally to semiconductor memory andmore particularly, in one or more embodiments, to solid statenon-volatile memory devices.

BACKGROUND

Electronic devices commonly have some type of bulk storage deviceavailable to them. A common example is a hard disk drive (HDD). HDDs arecapable of large amounts of storage at relatively low cost, with currentconsumer HDDs available with over one terabyte of capacity.

HDDs generally store data on rotating magnetic media platters. Data istypically stored as a pattern of magnetic flux reversals on theplatters. To write data to a typical HDD, the platter is rotated at highspeed while a write head floating above the platter generates a seriesof magnetic pulses to align magnetic particles on the platter torepresent the data. To read data from a typical HDD, resistance changesare induced in a magnetoresistive read head as it floats above theplatter rotated at high speed. In practice, the resulting data signal isan analog signal whose peaks and valleys are the result of the magneticflux reversals of the data pattern. Digital signal processing techniquescalled partial response maximum likelihood (PRML) are then used tosample the analog data signal to determine the likely data patternresponsible for generating the data signal.

HDDs have certain drawbacks due to their mechanical nature. HDDs aresusceptible to damage or excessive read/write errors due to shock,vibration or strong magnetic fields. In addition, they are relativelylarge users of power in portable electronic devices.

Another example of a bulk storage device is a solid state drive (SSD).Instead of storing data on rotating media, SSDs utilize semiconductormemory devices to store their data, but include an interface and formfactor making them appear to their host system as if they are a typicalHDD. The memory devices of SSDs are typically non-volatile flash memorydevices.

Flash memory devices have developed into a popular source ofnon-volatile memory for a wide range of electronic applications. Flashmemory devices typically use a one-transistor memory cell that allowsfor high memory densities, high reliability, and low power consumption.Changes in threshold voltage of the cells, through programming of chargestorage or trapping layers or other physical phenomena, determine thedata value of each cell. Common uses for flash memory and othernon-volatile memory include personal computers, personal digitalassistants (PDAs), digital cameras, digital media players, digitalrecorders, games, appliances, vehicles, wireless devices, cellulartelephones, and removable memory modules, and the uses for non-volatilememory continue to expand.

Unlike HDDs, the operation of SSDs is generally not subject tovibration, shock or magnetic field concerns due to their solid statenature. Similarly, without moving parts, SSDs have lower powerrequirements than HDDs. However, SSDs currently have much lower storagecapacities compared to HDDs of the same form factor and a significantlyhigher cost per bit.

For the reasons stated above, and for other reasons which will becomeapparent to those skilled in the art upon reading and understanding thepresent specification, there is a need in the art for alternative bulkstorage options.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a simplified block diagram of a memory device according to anembodiment of the disclosure.

FIG. 2 is a schematic of a portion of an example NAND memory array asmight be found in the memory device of FIG. 1.

FIG. 3 is a block schematic of a solid state bulk storage system inaccordance with one embodiment of the present disclosure.

FIG. 4 is a depiction of a wave form showing conceptually a data signalas might be received from the memory device by a read/write channel inaccordance with an embodiment of the disclosure.

FIG. 5 is a block schematic of an electronic system in accordance withan embodiment of the disclosure.

FIG. 6 is a flowchart of one embodiment of a method for calibrating acontroller circuit to reliability characteristics of a specific memorydevice.

FIG. 7 is a block diagram of one embodiment of a sub-portion of a memoryarray in accordance with the method of FIG. 6.

FIG. 8 is a flowchart of one embodiment of a method for programming witha self-calibration offset table generated by the embodiments of FIGS. 6and 7.

FIG. 9 is a flowchart of one embodiment of a method for calibrating amemory controller circuit for temperature induced systemic offsets inread and write paths of a memory device.

FIG. 10 is a flowchart of one embodiment of a method for performing awrite path adjustment in a memory device in accordance with thecalibration method of FIG. 8.

FIG. 11 is a flowchart of one embodiment of a method for performing aread path adjustment in a memory device in accordance with thecalibration method of FIG. 8.

DETAILED DESCRIPTION

In the following detailed description of the present embodiments,reference is made to the accompanying drawings that form a part hereof,and in which is shown by way of illustration specific embodiments inwhich the embodiments may be practiced. These embodiments are describedin sufficient detail to enable those skilled in the art to practice theinvention, and it is to be understood that other embodiments may beutilized and that process, electrical or mechanical changes may be madewithout departing from the scope of the present disclosure. Thefollowing detailed description is, therefore, not to be taken in alimiting sense, and the scope of the invention is defined only by theappended claims and equivalents thereof.

Traditional solid-state memory devices pass data in the form of binarysignals. Typically, a ground potential represents a first logic level ofa bit of data (i.e., first bit level), e.g., a ‘0’ data value, while asupply potential represents a second logic level of a bit of data (i.e.,second bit level), e.g., a ‘1’ data value. A multi-level cell (MLC) maybe assigned, for example, four different threshold voltage (V_(t))ranges of 200 mV for each range, with each range corresponding to adistinct bit pattern, thereby representing four different bit levels.Typically, a dead space or margin of 0.2V to 0.4V is between each rangeto keep the V_(t) distributions from overlapping. If the V_(t) of thecell is within the first range, the cell may be deemed to store alogical 11 state and is typically considered the erased state of thecell. If the V_(t) is within the second range, the cell may be deemed tostore a logical 10 state. If the V_(t) is within the third range, thecell may be deemed to store a logical 00 state. And if the V_(t) iswithin the fourth range, the cell may be deemed to store a logical 01state.

When programming a traditional MLC device as described above, cells aregenerally first erased, as a block, to correspond to the erased state.Following erasure of a block of cells, the least-significant bit (LSB)of each cell is first programmed, if necessary. For example, if the LSBis a 1, then no programming is necessary, but if the LSB is a 0, thenthe V_(t) of the target memory cell is moved from the V_(t) rangecorresponding to the 11 logic state to the V_(t) range corresponding tothe 10 logic state. Following programming of the LSBs, themost-significant bit (MSB) of each cell is programmed in a similarmanner, shifting the V_(t) where necessary. When reading an MLC of atraditional memory device, one or more read operations determinegenerally into which of the ranges the V_(t) of the cell voltage falls.For example, a first read operation may determine whether the V_(t) ofthe target memory cell is indicative of the MSB being a 1 or a 0 while asecond read operation may determine whether the V_(t) of the targetmemory cell is indicative of the LSB being a 1 or a 0. In each case,however, a single bit is returned from a read operation of a targetmemory cell, regardless of how many bits are stored on each cell. Thisproblem of multiple program and read operations becomes increasinglytroublesome as more bits are stored on each MLC.

The memory devices of an illustrative embodiment store data as V_(t)ranges on the memory cells. In contrast to traditional memory devices,however, the bit patterns of two or more bits per cell are programmedand/or read not as discrete bits, but as complete bit patterns. Forexample, in a two-bit MLC device, instead of programming a cell's LSBand subsequently programming that cell's MSB, a target threshold voltagemay be programmed representing the bit pattern of those two bitsSimilarly, instead of utilizing multiple read operations to determineeach bit stored on a cell, the threshold voltage of the cell may bedetermined and passed as a single signal representing the bit pattern ofthe cell. An advantage of this approach becomes more significant as thebits per cell count is increased.

FIG. 1 is a simplified block diagram of a memory device 101 according toan embodiment of the disclosure. Memory device 101 includes an array ofmemory cells 104 arranged in rows and columns. Although the variousembodiments will be described primarily with reference to NAND memoryarrays, the various embodiments are not limited to a specificarchitecture of the memory array 104. Some examples of other arrayarchitectures suitable for the present embodiments include NOR arrays,AND arrays, and virtual ground arrays.

A row decode circuitry 108 and a column decode circuitry 110 areprovided to decode address signals provided to the memory device 101.Address signals are received and decoded to access memory array 104.Memory device 101 also includes input/output (I/O) control circuitry 112to manage input of commands, addresses and data to the memory device 101as well as output of data and status information from the memory device101. An address register 114 is coupled between I/O control circuitry112 and row decode circuitry 108 and column decode circuitry 110 tolatch the address signals prior to decoding. A command register 124 iscoupled between I/O control circuitry 112 and control logic 116 to latchincoming commands. Control logic 116 controls access to the memory array104 in response to the commands and generates status information for theexternal processor 130. The control logic 116 is coupled to row decodecircuitry 108 and column decode circuitry 110 to control the row decodecircuitry 108 and column decode circuitry 110 in response to theaddresses.

Control logic 116 is also coupled to a sample and hold circuitry 118.The sample and hold circuitry 118 latches data, either incoming oroutgoing, in the form of analog voltage levels. For example, the sampleand hold circuitry could contain capacitors or other analog storagedevices for sampling either an incoming voltage signal representing datato be written to a memory cell or an outgoing voltage signal indicativeof the threshold voltage sensed from a memory cell. The sample and holdcircuitry 118 may further provide for amplification and/or buffering ofthe sampled voltage to provide a stronger data signal to an externaldevice.

During a write operation, target memory cells of the memory array 104are programmed until voltages indicative of their V_(t) levels match thelevels held in the sample and hold circuitry 118. This can beaccomplished, as one example, using differential sensing devices tocompare the held voltage level to a threshold voltage of the targetmemory cell. Programming pulses could be applied to a target memory cellto increase its threshold voltage until reaching or exceeding thedesired value. In a read operation, the V_(t) levels of the targetmemory cells are passed to the sample and hold circuitry 118 fortransfer to an external processor (not shown in FIG. 1).

Threshold voltages of cells may be determined in a variety of manners.For example, a word line voltage could be sampled at the point when thetarget memory cell becomes activated. Alternatively, a boosted voltagecould be applied to a first source/drain side of a target memory cell,and the threshold voltage could be taken as a difference between itscontrol gate voltage and the voltage at its other source/drain side. Bycoupling the voltage to a capacitor, charge would be shared with thecapacitor to store the sampled voltage. Note that the sampled voltageneed not be equal to the threshold voltage, but merely indicative ofthat voltage. For example, in the case of applying a boosted voltage toa first source/drain side of the memory cell and a known voltage to itscontrol gate, the voltage developed at the second source/drain side ofthe memory cell could be taken as the data signal as the developedvoltage is indicative of the threshold voltage of the memory cell.

Sample and hold circuitry 118 may include caching, i.e., multiplestorage locations for each data value, such that the memory device 101may be reading a next data value while passing a first data value to theexternal processor, or receiving a next data value while writing a firstdata value to the memory array 104. A status register 122 is coupledbetween I/O control circuitry 112 and control logic 116 to latch thestatus information for output to the external processor.

Memory device 101 receives control signals at control logic 116 over acontrol link 132. The control signals may include a chip enable CE#, acommand latch enable CLE, an address latch enable ALE, and a writeenable WE#. Memory device 101 may receive commands (in the form ofcommand signals), addresses (in the form of address signals), and data(in the form of data signals) from an external processor over amultiplexed input/output (I/O) bus 134 and output data to the externalprocessor over I/O bus 134.

In a specific example, commands are received over input/output (I/O)pins [0:7] of I/O bus 134 at I/O control circuitry 112 and are writteninto command register 124. The addresses are received over input/output(I/O) pins [0:7] of bus 134 at I/O control circuitry 112 and are writteninto address register 114. The data may be received over input/output(I/O) pins [0:7] for a device capable of receiving eight parallelsignals, or input/output (I/O) pins [0:15] for a device capable ofreceiving sixteen parallel signals, at I/O control circuitry 112 and aretransferred to sample and hold circuitry 118. Data also may be outputover input/output (I/O) pins [0:7] for a device capable of transmittingeight parallel signals or input/output (I/O) pins [0:15] for a devicecapable of transmitting sixteen parallel signals. It will be appreciatedby those skilled in the art that additional circuitry and signals can beprovided, and that the memory device of FIG. 1 has been simplified tohelp focus on the embodiments of the disclosure. Additionally, while thememory device of FIG. 1 has been described in accordance with popularconventions for receipt and output of the various signals, it is notedthat the various embodiments are not limited by the specific signals andI/O configurations described unless expressly noted herein. For example,command and address signals could be received at inputs separate fromthose receiving the data signals, or data signals could be transmittedserially over a single I/O line of I/O bus 134. Because the data signalsrepresent bit patterns instead of individual bits, serial communicationof an 8-bit data signal could be as efficient as parallel communicationof eight signals representing individual bits.

FIG. 2 is a schematic of a portion of an example NAND memory array 200as might be found in the memory array 104 of FIG. 1. As shown in FIG. 2,the memory array 200 includes word lines 2021 to 202N and intersectingbit lines 2041 to 204M. For ease of addressing in the digitalenvironment, the number of word lines 202 and the number of bit lines204 are generally each some power of two.

Memory array 200 includes NAND strings 2061 to 206M. Each NAND stringincludes transistors 2081 to 208N, each located at an intersection of aword line 202 and a bit line 204. The transistors 208, depicted asfloating-gate transistors in FIG. 2, represent non-volatile memory cellsfor storage of data. The floating-gate transistors 208 of each NANDstring 206 are connected in series source to drain between one or moresource select gates 210, e.g., a field-effect transistor (FET), and oneor more drain select gates 212, e.g., an FET. Each source select gate210 is located at an intersection of a local bit line 204 and a sourceselect line 214, while each drain select gate 212 is located at anintersection of a local bit line 204 and a drain select line 215.

A source of each source select gate 210 is connected to a common sourceline 216. The drain of each source select gate 210 is connected to thesource of the first floating-gate transistor 208 of the correspondingNAND string 206. For example, the drain of source select gate 210 ₁ isconnected to the source of floating-gate transistor 208 ₁ of thecorresponding NAND string 206 ₁. A control gate 220 of each sourceselect gate 210 is connected to source select line 214. If multiplesource select gates 210 are utilized for a given NAND string 206, theywould be coupled in series between the common source line 216 and thefirst floating-gate transistor 208 of that NAND string 206.

The drain of each drain select gate 212 is connected to a local bit line204 for the corresponding NAND string at a drain contact 228. Forexample, the drain of drain select gate 212 ₁ is connected to the localbit line 204 ₁ for the corresponding NAND string 206 ₁ at drain contact228 ₁. The source of each drain select gate 212 is connected to thedrain of the last floating-gate transistor 208 of the corresponding NANDstring 206. For example, the source of drain select gate 212 ₁ isconnected to the drain of floating-gate transistor 208 _(N) of thecorresponding NAND string 2061. If multiple drain select gates 212 areutilized for a given NAND string 206, they would be coupled in seriesbetween the corresponding bit line 204 and the last floating-gatetransistor 208 _(N) of that NAND string 206.

Typical construction of floating-gate transistors 208 includes a source230 and a drain 232, a floating gate 234, and a control gate 236, asshown in FIG. 2. Floating-gate transistors 208 have their control gates236 coupled to a word line 202. A column of the floating-gatetransistors 208 are those NAND strings 206 coupled to a given local bitline 204. A row of the floating-gate transistors 208 are thosetransistors commonly coupled to a given word line 202. Other forms oftransistors 208 may also be utilized with embodiments of the disclosure,such as NROM, magnetic or ferroelectric transistors and othertransistors capable of being programmed to assume one of two or morethreshold voltage ranges.

Memory devices of the various embodiments may be advantageously used inbulk storage systems. For various embodiments, these bulk storagesystems may take on the same form factor and communication bus interfaceof traditional HDDs, thus allowing them to replace such drives in avariety of applications. Some common form factors for HDDs include the3.5″, 2.5″ and PCMCIA (Personal Computer Memory Card InternationalAssociation) form factors commonly used with current personal computersand larger digital media recorders, as well as 1.8″ and 1″ form factorscommonly used in smaller personal appliances, such as cellulartelephones, personal digital assistants (PDAs) and digital mediaplayers. Some common bus interfaces include universal serial bus (USB),AT attachment interface (ATA) [also known as integrated driveelectronics or IDE], serial ATA (SATA), small computer systems interface(SCSI) and the Institute of Electrical and Electronics Engineers (IEEE)1394 standard. While a variety of form factors and communicationinterfaces were listed, the embodiments are not limited to a specificform factor or communication standard. Furthermore, the embodiments neednot conform to a HDD form factor or communication interface. FIG. 3 is ablock schematic of a solid state bulk storage system 300 in accordancewith one embodiment of the present disclosure.

The bulk storage system 300 includes a memory device 301 in accordancewith an embodiment of the disclosure, a read/write channel 305 and acontroller 310. The read/write channel 305 provides foranalog-to-digital conversion of data signals received from the memorydevice 301 as well as digital-to-analog conversion of data signalsreceived from the controller 310. The controller 310 provides forcommunication between the bulk storage system 300 and an externalprocessor (not shown in FIG. 3) through bus interface 315. It is notedthat the read/write channel 305 could service one or more additionalmemory devices, as depicted by memory device 301′ in dashed lines.Selection of a single memory device 301 for communication can be handledthrough a multi-bit chip enable signal or other multiplexing scheme.

The memory device 301 is coupled to a read/write channel 305 through ananalog interface 320 and a digital interface 325. The analog interface310 provides for the passage of analog data signals between the memorydevice 301 and the read/write channel 305 while the digital interface325 provides for the passage of control signals, command signals andaddress signals from the read/write channel 305 to the memory device301. The digital interface 325 may further provide for the passage ofstatus signals from the memory device 301 to the read/write channel 305.The analog interface 320 and the digital interface 325 may share signallines as noted with respect to the memory device 101 of FIG. 1.

The read/write channel 305 is coupled to the controller 310 through oneor more interfaces, such as a data interface 330 and a control interface335. The data interface 330 provides for the passage of digital datasignals between the read/write channel 305 and the controller 310. Thecontrol interface 335 provides for the passage of control signals,command signals and address signals from the controller 310 to theread/write channel 305. The control interface 335 may further providefor the passage of status signals from the read/write channel 305 to thecontroller 310. Status and command/control signals may also be passeddirectly between the controller 310 and the memory device 301 asdepicted by the dashed line connecting the control interface 335 to thedigital interface 325.

Although depicted as two distinct devices, the functionality of theread/write channel 305 and the controller 310 could alternatively beperformed by a single integrated circuit device. And while maintainingthe memory device 301 as a separate device would provide moreflexibility in adapting the embodiments to different form factors andcommunication interfaces, because it is also an integrated circuitdevice, the entire bulk storage system 300 could be fabricated as asingle integrated circuit device.

The read/write channel 305 is a signal processor adapted to at leastprovide for conversion of a digital data stream to an analog data streamand vice versa.

In practice, control and command signals are received at the businterface 315 for access of the memory device 301 through the controller310. Addresses and data values may also be received at the bus interface315 depending upon what type of access is desired, e.g., write, read,format, etc. In a shared bus system, the bus interface 315 would becoupled to a bus along with a variety of other devices. To directcommunications to a specific device, an identification value may beplaced on the bus indicating which device on the bus is to act upon asubsequent command. If the identification value matches the value takenon by the bulk storage system 300, the controller 310 would then acceptthe subsequent command at the bus interface 315. If the identificationvalue did not match, the controller 310 would ignore the subsequentcommunication. Similarly, to avoid collisions on the bus, the variousdevices on a shared bus may instruct other devices to cease outboundcommunication while they individually take control of the bus. Protocolsfor bus sharing and collision avoidance are well known and will not bedetailed herein. The controller 310 then passes the command, address anddata signals on to the read/write channel 305 for processing. Note thatthe command, address and data signals passed from the controller 310 tothe read/write channel 305 need not be the same signals received at thebus interface 315. For example, the communication standard for the businterface 315 may differ from the communication standard of theread/write channel 305 or the memory device 301. In this situation, thecontroller 310 may translate the commands and/or addressing scheme priorto accessing the memory device 301. In addition, the controller 310 mayprovide for load leveling within the one or more memory devices 301,such that physical addresses of the memory devices 301 may change overtime for a given logical address. Thus, the controller 310 would map thelogical address from the external device to a physical address of atarget memory device 301.

For write requests, in addition to the command and address signals, thecontroller 310 would pass digital data signals to the read/write channel305. For example, for a 16-bit data word, the controller 310 would pass16 individual signals having a first or second binary logic level. Theread/write channel 305 would then convert the digital data signals to ananalog data signal representative of the bit pattern of the digital datasignals. To continue with the foregoing example, the read/write channel305 would use a digital-to-analog conversion to convert the 16individual digital data signals to a single analog signal having apotential level indicative of the desired 16-bit data pattern. For oneembodiment, the analog data signal representative of the bit pattern ofthe digital data signals is indicative of a desired threshold voltage ofthe target memory cell. However, in programming of a one-transistormemory cells, it is often the case that programming of neighboringmemory cells will increase the threshold voltage of previouslyprogrammed memory cells. Thus, for another embodiment, the read/writechannel 305 can take into account these types of expected changes in thethreshold voltage, and adjust the analog data signal to be indicative ofa threshold voltage lower than the final desired threshold voltage.After conversion of the digital data signals from the controller 310,the read/write channel 305 would then pass the write command and addresssignals to the memory device 301 along with the analog data signals foruse in programming the individual memory cells. Programming can occur ona cell-by-cell basis, but is generally performed for a page of data peroperation. For a typical memory array architecture, a page of dataincludes every other memory cell coupled to a word line.

For read requests, the controller would pass command and address signalsto the read/write channel 305. The read/write channel 305 would pass theread command and address signals to the memory device 301. In response,after performing the read operation, the memory device 301 would returnthe analog data signals indicative of the threshold voltages of thememory cells defined by the address signals and the read command. Thememory device 301 may transfer its analog data signals in parallel orserial fashion.

The analog data signals may also be transferred not as discrete voltagepulses, but as a substantially continuous stream of analog signals. Inthis situation, the read/write channel 305 may employ signal processingsimilar to that used in HDD accessing called PRML or partial response,maximum likelihood. In PRML processing of a traditional HDD, the readhead of the HDD outputs a stream of analog signals representative offlux reversals encountered during a read operation of the HDD platter.Rather than attempting to capture the true peaks and valleys of thisanalog signal generated in response to flux reversals encountered by theread head, the signal is periodically sampled to create a digitalrepresentation of the signal pattern. This digital representation canthen be analyzed to determine the likely pattern of flux reversalsresponsible for generation of the analog signal pattern. This same typeof processing can be utilized with embodiments of the presentdisclosure. By sampling the analog signal from the memory device 301,PRML processing can be employed to determine the likely pattern ofthreshold voltages responsible for generation of the analog signal.

FIG. 4 is a depiction of a wave form showing conceptually a data signal450 as might be received from the memory device 301 by the read/writechannel 305 in accordance with an embodiment of the disclosure. The datasignal 450 could be periodically sampled, such as is indicated by thedashed lines at times t1, t2, t3 and t4, and a digital representation ofthe data signal 450 can be created from the amplitudes of the sampledvoltage levels. A trade-off is made between sampling rate and accuracyof the representation. The digital representation can then be used topredict what incoming voltage levels were likely responsible forgenerating the analog signal pattern. In turn, the likely data values ofthe individual memory cells being read can be predicted from thisexpected pattern of incoming voltage levels.

Recognizing that errors will occur in the reading of data values fromthe memory device 301, the read/write channel 305 may include errorcorrection. Error correction is commonly used in memory devices, as wellas HDDs, to recover from expected errors. Typically, a memory devicewill store user data in a first set of locations and error correctioncode (ECC) in a second set of locations. During a read operation, boththe user data and the ECC are read in response to a read request of theuser data. Using known algorithms, the user data returned from the readoperation is compared to the ECC. If the errors are within the limits ofthe ECC, the errors will be corrected.

FIG. 5 is a block schematic of an electronic system in accordance withan embodiment of the disclosure. Example electronic systems may includepersonal computers, PDAs, digital cameras, digital media players,digital recorders, electronic games, appliances, vehicles, wirelessdevices, cellular telephones and the like.

The electronic system includes a host processor 500 that may includecache memory 502 to increase the efficiency of the processor 500. Theprocessor 500 is coupled to a communication bus 504. A variety of otherdevices may be coupled to the communication bus 504 under control of theprocessor 500. For example, the electronic system may include randomaccess memory (RAM) 506; one or more input devices 508 such askeyboards, touch pads, pointing devices, etc.; an audio controller 510;a video controller 512; and one or more bulk storage systems 514. Atleast one bulk storage system 514 includes a digital bus interface 515for communication with the bus 504, one or more memory devices inaccordance with an embodiment of the disclosure having an analoginterface for transfer of data signals representative of data patternsof two or more bits of data, and a signal processor adapted to performdigital-to-analog conversion of digital data signals received from thebus interface 515 and analog-to-digital conversion of analog datasignals received from its memory device(s).

It is to be understood by those skilled in the art that all datamanipulation, programming, and reading can be done in the digital domainwithout converting the digital data bit patterns to their equivalentanalog voltages.

Due to slight differences in the composition of each cell during thefabrication process and the fabrication process itself, cell-to-cellcoupling influence can vary from block-to-block across the memory array.The coupling influence can be different between different integratedcircuit dies such that two memory devices may not share the samecharacteristics. Temperature changes can also cause voltage offsets inthe read and write paths of a memory device.

FIG. 6 illustrates a flowchart of one embodiment of a method forself-calibration, such as by a memory controller, to the couplinginfluence of different areas of a memory array. This method enables thecontroller to determine the cell-to-cell coupling effect in differentareas of the memory array, store the resulting programming offset foreach area of memory, and use that offset in future programming in eacharea of memory.

The memory controller or control circuit performing the self-calibrationcan be part of the memory device (i.e., on the same die as the memoryarray) or separate from the memory device. One example of a bulk storagememory controller 310 is illustrated in FIG. 3. Subsequent reference toa memory system refers to a memory in either configuration. Reference ismade to the block diagram of the partial memory cell array of FIG. 7while discussing the method of FIG. 6.

The calibration method writes a voltage 601 to the center memory cell701. The voltage is a threshold voltage that represents a programmedstate such as a single bit state or a multiple bit state. As discussedpreviously, the threshold voltage can be generated by the controlcircuit, coupled to and controlling the memory device, as a digitalsignal representative of the desired threshold voltage. A read/writechannel circuit and/or controller circuit then performs adigital-to-analog conversion on the digital signal to produce the analogrepresentation of the desired threshold voltage.

A bit pattern represented by another analog voltage is written 603 toone or more of the surrounding memory cells 703, 705. Each adjacentmemory cell 703, 705 may be programmed with the same analog voltage or adifferent analog voltage. The cells 703, 705 adjacent to the center cell701 and in the word line direction affect the center cell by bothcapacitive coupling and by program disturb. Programming of the cells710, 711 along the bit line direction affect the threshold voltage onthe center cell 701 by capacitive coupling. These effects tend to raisethe threshold voltage of the center cell 701.

The center cell 701 is read 604 after each write operation to determinean effect, such as the extent to which the programming of thesurrounding cells has affected the center cell's stored voltage. Thevoltage on these cells 703, 705 is then varied 605, typically increased,and the center cell is read after each change 606 to determine theeffect on the center cell 701. An indication of the effect on the centercell 701 is stored in a table 607 in memory for future reference. In oneembodiment, this indication is an offset indicating the averagethreshold voltage change of the center cell 701 in response to thechange in the threshold voltages of the surrounding cells. For example,the offset might be a 5 mV change for every 5V used in programming thesurrounding cells. The stored offset can then be used later whenprogramming cells in that area of memory. In another embodiment, theindication of the effect on the center cell is the greatest voltagechange that occurs on the center cell in response to of programming oneor more of the adjacent cells.

The quantity and orientation of the programmed cells that surround thecenter cell 701 can vary for different embodiments. For example,vertical cells 710, 711 along the same bit line as the center cell 701,and also diagonal cells, can be programmed and their influence on thecenter cell 701 can be measured as described above. These effects tendto raise the threshold voltage of the center cell 701.

The calibration method illustrated in FIGS. 6 and 7 is performed onrepresentative cells of different areas of the memory array. The methodscan be performed on random cells of the entire memory array or inspecific areas of the array. For example, the methods may be performedon the corner cells of the array and in the center. In anotherembodiment, certain areas of each memory block can be checked. In stillanother embodiment, the methods can be performed on cells located atperiodic intervals of the memory array.

The self-calibration can be performed once during the manufacturingprocess and the programming offset indications stored in non-volatilememory. In another embodiment, the calibration is performed at everypower-up of the memory device.

In still another embodiment, the self-calibration method is performedduring the manufacturing process then the stored offset table is updatedat each power-up of the memory device. For example, the offset tablestored during manufacture of the device would be a general offset tablegenerated under the manufacturing conditions. Those offsets would beupdated due to the changed environmental conditions during actual use ofthe part.

In yet another embodiment, the stored self-calibration offsets arevoltage differences between the results of read and write circuits. Forexample, a write circuit may write an analog voltage of 2.3V to a memorycell. A read circuit may read this voltage as being 2.35V. Therefore,there is an offset of 0.05V between the voltage that was written and thevoltage that was read.

The offset table in one such embodiment is generated by writing a knownvoltage to a cell and then reading that voltage. The difference isstored as an offset for that particular area of memory. Thisself-calibration embodiment can perform the write-then-read method onrandom areas of memory or in a certain pattern as previously described.

FIG. 8 illustrates one embodiment of a method for programming with theself-calibration offset table generated by the above-describedembodiments. The analog voltage to be programmed in a selected memorycell is determined 801. In one embodiment, the voltage is a result of adigital-to-analog conversion process that converts a digital data bitpattern to its equivalent analog voltage.

The offset for the area of memory in which the selected memory cell islocated is determined by reading the stored offset for that particulararea 803. The offset is then applied to the analog voltage to beprogrammed 805. For example, if the voltage to be programmed is 1.7V andthe offset is 0.03V, the resulting voltage to be programmed is 1.73V.The resulting voltage is then programmed into the selected memory cell807.

FIG. 9 illustrates one embodiment of a method for calibrating the memorycontroller to compensate for temperature induced systemic offsetscreated in the read and write paths of a memory device. This methodgenerates both a write path calibration table and a read pathcalibration table. Adjustments for intermediate temperatures notincluded in these tables can be interpolated from the tables.

The method begins with writing a voltage to a memory cell at arelatively high temperature 901. For example, a relatively hightemperature might be the upper temperature limit of the operatingtemperature range of the memory device (e.g., 75°-85° C.). The memorycell is then read at this temperature 903. This read gives the voltageoffset experienced between the voltage that was written and the voltagethat was read at the higher temperature.

The temperature of the memory device is then reduced and the memory cellthat was programmed at the higher temperature is read at a lowertemperature 905. In one embodiment, the lower temperature is the lowerlimit of the operating temperature range of the memory device (e.g.,−20°-0° C.). This operation gives the voltage offset experienced betweenthe voltage that was written at the high temperature and then read at alower temperature.

The same voltage level is then written to the same memory cell (after itis erased) at the lower temperature range 907. This memory cell is thenread at the lower temperature range 909. This read gives the voltageoffset experienced between the voltage that was written at the lowertemperature and the voltage that was read at the lower temperature.

The memory device is then warmed to the high temperature and the memorycell is then read again 911. This read gives the voltage offsetexperienced between the voltage that was written at the lowertemperature and the voltage that is read at the higher temperature.

A calibration table can now be generated 913 from the above offsets atthe upper and lower temperature limits. The table can also be filled inwith interpolations of voltage offsets at different temperatures betweenthe two temperature extremes. In an alternate embodiment, theseinterpolations are performed later during the read and write pathadjustment methods.

The calibration method of FIG. 9 is performed on representative cells ofdifferent areas of the memory array. The methods can be performed onrandom cells of the entire memory array or in specific areas of thearray. For example, the methods may be performed on the corner cells ofthe array and in the center. In another embodiment, certain areas ofeach memory block can be checked. In still another embodiment, themethods can be performed on cells located at periodic intervals of thememory array.

FIG. 10 illustrates a flowchart of one embodiment of a method forperforming a write path adjustment in a memory device in accordance withthe calibration table generated from the embodiment of FIG. 9. Thetemperature of the memory device is first determined 1001 by using anytemperature measurement method. Such a measurement method can include anon-chip temperature sensor or some other measurement technique.

The calibration table is then accessed to find that temperature and theassociated voltage offset for that temperature 1003. If that temperatureis not in the table, an interpolation between two temperatures andassociated offsets in the table can be performed to determine anappropriate voltage offset for that particular temperature. The voltageoffset is added to or subtracted from the target write voltage level1005. As described previously, this voltage level is representative of abit pattern to be programmed into the selected memory cell. Thisadjusted voltage level is then programmed into the cell 1007.

FIG. 11 illustrates a flowchart of one embodiment of a method forperforming a read path adjustment in a memory device in accordance withthe calibration table generated from the embodiment of FIG. 9. Thetemperature of the memory device is first determined 1102 by using anytemperature measurement method. Such a measurement method can include anon-chip temperature sensor or some other measurement technique.

The calibration table is then accessed to find that temperature and theassociated voltage offset for that temperature 1104. If that temperatureis not in the table, an interpolation between two temperatures andassociated offsets in the table can be performed to determine anappropriate voltage offset for that particular temperature.

The voltage offset is added to or subtracted from the voltage that isread from the memory cell 1106. This adjusted voltage level is used bythe analog-to-digital conversion process described above in determiningthe bit pattern represented by the analog voltage that was stored on thememory cell 1108.

It is to be understood by those skilled in the art that all datamanipulation, programming and read can be done in the digital domainwithout converting the digital data bit patterns to their equivalentanalog voltages.

CONCLUSION

One or more of the disclosed embodiments store an offset in memory thatis added to a voltage to be programmed prior to programming the selectedmemory cell. For example, in one embodiment self-calibration determinesan offset that results from the influence of programming surroundingcells or differences between write and read circuitry. In anotherembodiment, self-calibration determines an offset that results fromtemperature induced systemic offsets created in the read and write pathsof the memory device. These offsets are applied to the voltages to beprogrammed in certain areas of memory (e.g., each block, corners andcenter of the array) as those areas are being programmed.

Although specific embodiments have been illustrated and describedherein, it will be appreciated by those of ordinary skill in the artthat any arrangement that is calculated to achieve the same purpose maybe substituted for the specific embodiments shown. Many adaptations ofthe disclosure will be apparent to those of ordinary skill in the art.Accordingly, this application is intended to cover any adaptations orvariations of the disclosure. It is also to be understood that althoughcalibration methods are presented as analog voltage storage innon-volatile cells the same can be applied to digital data patternequivalent to analog voltages.

What is claimed is:
 1. A controller configured to: program a selectedmemory cell; program an adjacent memory cell, wherein the adjacentmemory cell is adjacent to the selected memory cell; determine an effectof programming the adjacent memory cell on the selected memory cell; andstore an indication of the effect in a table.
 2. The controller of claim1, wherein the controller is further configured to: read the selectedmemory cell after programming the selected memory cell and beforeprogramming the adjacent memory cell; and read the selected memory cellafter programming the adjacent memory cell, wherein the effect ofprogramming the adjacent memory cell on the selected memory cellcomprises a difference between the readings.
 3. The controller of claim1, wherein the controller is configured to determine the effect bydetermining a change in threshold voltage of the selected memory cell.4. The controller of claim 1, wherein the controller is configured toprogram a plurality of memory cells adjacent to the selected memory celland is configured to determine an effect of programming the plurality ofmemory cells adjacent to the selected memory cell on the selected memorycell.
 5. The controller of claim 4, wherein the controller is configuredto program the plurality of memory cells adjacent to the selected memorycell with a same voltage.
 6. The controller of claim 1, wherein thecontroller is configured to vary the voltage of the adjacent memory celland to determine an effect of varying the voltage of the adjacent memorycell on the selected memory cell.
 7. The controller of claim 1, whereinthe controller is configured to determine the indication of the effectstored in the table by determining an average threshold voltage changeof the selected memory cell in response to a change in a thresholdvoltage of the adjacent memory cell and to take the average thresholdvoltage change of the selected memory cell to be the indication.
 8. Thecontroller of claim 1, wherein the controller is configured to determinethe indication of the effect stored in the table by determining agreatest voltage change that occurred on the selected memory cell inresponse to programming the adjacent memory cell and to take thegreatest voltage change that occurred on the selected memory cell inresponse to programming the adjacent memory cell to be the indication.9. The controller of claim 1, wherein the controller is furtherconfigured to: program another selected memory cell in a different areaof a memory array than an area of the memory array including theselected memory cell; program another adjacent memory cell afterprogramming the other selected memory cell, wherein the other adjacentmemory cell is adjacent to the other selected memory cell; determine aneffect of programming the other adjacent memory cell on the otherselected memory cell; and store an indication of the effect ofprogramming the other adjacent memory cell on the other selected memorycell in a table.
 10. The controller of claim 1, wherein the controlleris configured to store the indication of the effect in the table byupdating the table.
 11. The controller of claim 1, wherein thecontroller is further configured to use the indication of the effectwhen programming memory cells in an area of a memory array including theselected memory cell.
 12. A controller configured to: write a writevoltage to a memory cell in a particular area of a memory array;determine a read voltage of the memory cell; determine a differencebetween the write voltage and the read voltage; and store the differenceas an offset for the particular area.
 13. The controller of claim 12,wherein the particular area comprises corner memory cells of the memoryarray and memory cells in the center of the memory array, or comprisesmemory cells located at periodic intervals in the memory array.
 14. Thecontroller of claim 12, wherein the controller is further configured to:determine a difference between a write voltage and a read voltage formemory cells in each of a plurality of areas of the memory array; andstore each difference as an offset in a table in the memory array.
 15. Acontroller configured to: determine an offset for an area of a memoryarray in which a memory cell is located; apply the offset to a targetvoltage to be programmed in the memory cell; and program an adjustedvoltage into the memory cell, wherein the adjusted voltage comprises avoltage resulting from applying the offset to the target voltage. 16.The controller of claim 15, wherein the controller is configureddetermine an offset for the area of the memory array in which the memorycell is located each time a memory device coupled to the controller andcomprising the memory array powers up.
 17. A controller configured to:determine a temperature of a memory device; determine an offsetassociated with the determined temperature; apply the offset to a targetvoltage for a memory cell of the memory device; and program an adjustedvoltage into the memory cell, wherein the adjusted voltage comprises avoltage resulting from applying the offset to the target voltage. 18.The controller of claim 17, wherein the controller is configured todetermine the offset from a calibration table.
 19. The controller ofclaim 18, wherein the controller is configured to interpolate betweentwo temperatures and associated offsets in the calibration table todetermine the offset associated with the determined temperature.
 20. Thecontroller of claim 17, wherein the offset associated with thedetermined temperature comprises an offset experienced between a voltagethat was written to a memory cell at the determined temperature and avoltage that was read from the memory cell at the determinedtemperature.
 21. The controller of claim 17, wherein the controllerapplies the offset to the target voltage for the memory cell of thememory device by adding the offset to or subtracting the offset from thetarget voltage.
 22. The controller of claim 17, wherein the adjustedvoltage level is representative of a bit pattern to be programmed intothe memory cell.
 23. A controller configured to: determine a temperatureof a memory device; determine an offset associated with the determinedtemperature; and apply the offset to a voltage read from a memory cellof the memory device.
 24. The controller of claim 23, wherein thecontroller applies the voltage read from the memory cell by adding theoffset to or subtracting the offset from the voltage read from thememory cell.